isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.04 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体