N-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半导体

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

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MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

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MOTOROLA

摩托罗拉

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

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PHI

PHI