MTP60N05HDL

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvol

60N05

60A,50VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC60N05isanN-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge.TheUTC60N05issuitableformotorcontrol,AC-DCorDC-DCconvertersandaudioamplifiers,etc

60N05

FastSwitchingSpeed

HM60N05

N-ChannelEnhancementModePowerMOSFET

HM60N05K

N-ChannelEnhancementModePowerMOSFET

MTB60N05HD

N?묬hannelPowerMOSFET

MTB60N05HDL

N?묬hannelPowerMOSFET

MTM60N05

N-CHANNELTWOSPOWERFETs

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

MTP60N05

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM

TMOSPOWERFET60AMPERES50VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvol

OM60N05SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr