TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

文件：217.15 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.85 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

文件：217.15 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-Channel 60-V (D-S) MOSFET

文件：979.95 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N?묬hannel Power MOSFET

文件：229.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N−Channel Power MOSFET

ONSEMI

安森美半导体