isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE SILICON GATE

文件：112.54 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH 400V 5A 3-Pin(3+Tab) TO-220

NJS

High Speed Switching Applications

文件：152.26 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage

文件：143.37 Kbytes 页数：5 Pages

TOSHIBA

东芝