N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery

文件：237.95 Kbytes 页数：8 Pages

Motorola

摩托罗拉

TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS

Logic Level TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：221.37 Kbytes 页数：8 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：272.33 Kbytes 页数：2 Pages

ISC

无锡固电

POWER FIELD EFFECT TRANSISTOR

文件：170.28 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.35 Kbytes 页数：2 Pages

ISC

无锡固电

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement Mode silicon Gate TMOS POWER FET 10 AMPERES RDS(on) = 0.45 OHM 250 VOLTS

文件：168.47 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Power Field Effect Transistor

文件：85.2 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Field Effect Transistor

文件：85.2 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS

N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi

文件：249.4 Kbytes 页数：8 Pages

Motorola

摩托罗拉