TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

TMOS E−FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：159.26 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.22 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specif

文件：175.09 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage-: VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 8 Ω (Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements

文件：116.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：232.59 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.46 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：221.1 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.6 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.75 Kbytes 页数：2 Pages

ISC

无锡固电