MTP1N80E中文资料PDF规格书
MTP1N80E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
MTP1N80E
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
06+ |
TO-220 |
3000 |
原装库存 |
询价 | ||
SILICON |
24+ |
QFN |
8004 |
询价 | |||
SEIKO/精工 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
SEIKO INSTRUMENTS INC. |
2022+ |
6600 |
只做原装,假一罚十,长期供货。 |
询价 | |||
MUETIPTEX |
23+ |
N/A |
68973 |
询价 | |||
精工 |
2406+ |
1850 |
诚信经营!进口原装!量大价优! |
询价 | |||
MOT/ON |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
MOT |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CYSTEKE |
2020+ |
SOT-89 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
CYSTECH/全宇昕 |
2023+ |
TO-252 |
51948 |
16余年资质 绝对原盒原盘 更多数量 |
询价 |