isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：345.05 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：377.84 Kbytes 页数：2 Pages

ISC

无锡固电

-55V P-Channel Enhancement Mode MOSFET

Features - VDS=-55V ID=-4.0A - RDS(ON)

文件：1.51571 Mbytes 页数：7 Pages

APME

永源微电子

-55V P-Channel Enhancement Mode MOSFET

Features - VDS = -55V ID =-4.2A - RDS(ON)

文件：1.42092 Mbytes 页数：7 Pages

APME

永源微电子

POWER FIELD EFFECT TRANSISTOR

POWER FIELD EFFECT TRANSISTOR

文件：177.75 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉