isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：345.27 Kbytes 页数：2 Pages

ISC

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：378.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.00408 Mbytes 页数：8 Pages

VBSEMI

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文件：428.64 Kbytes 页数：8 Pages

PANJIT

強茂