8mm LED LAMP

FEATURES • Choice of diffused or tinted clear lens APPLICATIONS • Outdoor backlighting • Large area backlighting • Moving message signs

文件：133.35 Kbytes 页数：2 Pages

Marktech

8mm LED LAMP

FEATURES • Choice of diffused or tinted clear lens APPLICATIONS • Outdoor backlighting • Large area backlighting • Moving message signs

文件：133.35 Kbytes 页数：2 Pages

Marktech

2Gb: x4, x8, x16 DDR3 SDRAM Features

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光

DDR3 SDRAM MT41J512M4 ??64 Meg x 4 x 8 Banks MT41J256M8 ??32 Meg x 8 x 8 Banks MT41J128M16 ??16 Meg x 16 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光

DDR3 SDRAM MT41J512M4 ??64 Meg x 4 x 8 Banks MT41J256M8 ??32 Meg x 8 x 8 Banks MT41J128M16 ??16 Meg x 16 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光

DDR3 SDRAM MT41J256M4 ??32 Meg x 4 x 8 banks MT41J128M8 ??16 Meg x 8 x 8 banks MT41J64M16 ??8 Meg x 16 x 8 banks

MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer

文件：2.93817 Mbytes 页数：214 Pages

Micron

美光

DDR3 SDRAM MT41J256M4 ??32 Meg x 4 x 8 banks MT41J128M8 ??16 Meg x 8 x 8 banks MT41J64M16 ??8 Meg x 16 x 8 banks

MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer

文件：2.93817 Mbytes 页数：214 Pages

Micron

美光

2Gb: x4, x8, x16 DDR3 SDRAM Features

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光

DDR3 SDRAM MT41J512M4 ??64 Meg x 4 x 8 Banks MT41J256M8 ??32 Meg x 8 x 8 Banks MT41J128M16 ??16 Meg x 16 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光

MT41J512M4 ??64 Meg x 4 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

Micron

美光