MT41J512M4 ??64 Meg x 4 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

MICRON

美光

2Gb: x4, x8, x16 DDR3 SDRAM Features

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

MICRON

美光

2Gb: x4, x8, x16 DDR3 SDRAM Features

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

MICRON

美光

DDR3 SDRAM MT41J512M4 ??64 Meg x 4 x 8 Banks MT41J256M8 ??32 Meg x 8 x 8 Banks MT41J128M16 ??16 Meg x 16 x 8 Banks

DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-di

文件：2.90783 Mbytes 页数：211 Pages

MICRON

美光

DDR3 SDRAM MT41J256M4 ??32 Meg x 4 x 8 banks MT41J128M8 ??16 Meg x 8 x 8 banks MT41J64M16 ??8 Meg x 16 x 8 banks

MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer

文件：2.93817 Mbytes 页数：214 Pages

MICRON

美光

DDR3 SDRAM MT41J256M4 ??32 Meg x 4 x 8 banks MT41J128M8 ??16 Meg x 8 x 8 banks MT41J64M16 ??8 Meg x 16 x 8 banks

MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer

文件：2.93817 Mbytes 页数：214 Pages

MICRON

美光

8Gb: x16 TwinDie Automotive DDR3L SDRAM

Description The 8Gb (TwinDie) DDR3L SDRAM (1.35V) uses two Micron 4Gb DDR3L SDRAM x8 die for a 2 byte x16 de- vice in one package. Refer to Micron’s 4Gb DDR3L SDRAM data sheet (x8 option) for specifications not included in this document, specifications for base part number MT41K512M8 correlate to

文件：2.5842 Mbytes 页数：16 Pages

MICRON

美光

ECP5 Versa Development Board User Guide

Features • Half-length PCI Express form-factor —Allows demonstration of PCI Express x1 interconnection • Electrical testing of one full-duplex SERDES channel via SMA connections • USB-B connection for UART and device programming • Two RJ45 interfaces to 10/100/1000 Ethernet to RGMII • On-bo

文件：3.25954 Mbytes 页数：32 Pages

LATTICE

莱迪思

Marktech Standard 5mm White Diff. & Water Clear LEDs

FEATURES • Excellent on/off contrasts • Choice of white diffused or water clear lens • Other colors/materials available • Option of standoffs or hard leads • Can be packaged on tape in a reel or in a box

文件：35.57 Kbytes 页数：1 Pages

MARKTECH

Marktech Standard 10mm LEDs

FEATURES • Excellent on/off contrasts • Solid state reliability • Choice of color or white diffused lens • Other colors/materials available

文件：38.4 Kbytes 页数：1 Pages

MARKTECH