首页>MT41J256M8HX-187ED>规格书详情
MT41J256M8HX-187ED中文资料PDF规格书
MT41J256M8HX-187ED规格书详情
DDR3 SDRAM
2Gb: x4, x8, x16 DDR3 SDRAM
Features
• VDD= VDDQ= 1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• Posted CAS additive latency (AL)
• Programmable CAS WRITE latency (CWL) based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Write leveling
• Multipurpose register
• Output driver calibration
产品属性
- 型号:
MT41J256M8HX-187ED
- 制造商:
MICRON
- 制造商全称:
Micron Technology
- 2Gb:
x4, x8, x16 DDR3 SDRAM Features
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICRON |
2016+ |
FBGA |
5600 |
只做原装,假一罚十,内存,闪存,公司可开17%增值税 |
询价 | ||
MICRON |
2023+ |
FBGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MICRON |
23+ |
NA |
3230 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
MICRON |
2021+ |
BGA |
8686 |
原装正品假一罚十 |
询价 | ||
MicronTechnologyInc |
2022 |
ICDDR3SDRAM2GBIT82FBGA |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
Micron/Micron Technology Inc./ |
21+ |
BGA |
626 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MICRON |
BGA |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
MICRON |
09+ |
BGA |
626 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
MICRON/美光 |
22+ |
FBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Micron |
23+ |
82FBGA (12.5x15.5) |
9000 |
原装正品,支持实单 |
询价 |