MT41J256M8HX-187ED中文资料镁光数据手册PDF规格书

DDR3 SDRAM

2Gb: x4, x8, x16 DDR3 SDRAM

Features

• VDD= VDDQ= 1.5V ±0.075V

• 1.5V center-terminated push/pull I/O

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS READ latency (CL)

• Posted CAS additive latency (AL)

• Programmable CAS WRITE latency (CWL) based on tCK

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to 95°C

– 64ms, 8192 cycle refresh at 0°C to 85°C

– 32ms, 8192 cycle refresh at 85°C to 95°C

• Self refresh temperature (SRT)

• Write leveling

• Multipurpose register

• Output driver calibration