Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 页数：7 Pages

Microsemi

美高森美

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 页数：7 Pages

Microsemi

美高森美

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 页数：7 Pages

Microsemi

美高森美

Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900

DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a TO-206AA package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：1.09927 Mbytes 页数：8 Pages

Microsemi

美高森美

Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900

DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully

文件：440 Kbytes 页数：7 Pages

Microsemi

美高森美

30.0 A Switchmode Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss，High Efficiency * Ultrafast 35 and 60 Nanosecond Recovery times

文件：1.02663 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

30.0 AMPS. Super Fast Rectifiers Reverse Voltage: 100 to 600 Volts Forward Current:30.0 Amperes

Features Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Glass passivated chip junctions Low power loss, high efficiency Superfast recovery time, high voltage Low forward voltage, high current capability Low th

文件：1.01365 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

30.0 AMPS. Super Fast Rectifiers Reverse Voltage: 100 to 600 Volts Forward Current:30.0 Amperes

Features Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Glass passivated chip junctions Low power loss, high efficiency Superfast recovery time, high voltage Low forward voltage, high current capability Low th

文件：1.01365 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

30.0 A Switchmode Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss，High Efficiency * Ultrafast 35 and 60 Nanosecond Recovery times

文件：1.02663 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

30.0 AMPS. Super Fast Rectifiers Reverse Voltage: 100 to 600 Volts Forward Current:30.0 Amperes

Features Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Glass passivated chip junctions Low power loss, high efficiency Superfast recovery time, high voltage Low forward voltage, high current capability Low th

文件：1.01365 Mbytes 页数：3 Pages

LUGUANG

鲁光电子