Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

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MICROSEMI

美高森美

NPN Switching 15V to 20V, 0.1A

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two le The device packages for the encapsulated (THROUGH-HOLE AND SURFACE MOUNT) device types are as follows: (2N2369A and 2N3227) (TO-18), (2N4449) (TO-46), (2N2369A 2N3227, 2N4449) (UB, UBC, and UBCN), (UA version), (U version dual devices). \nThe dimensions and topography for JANHC and JANKC unencapsula;

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：RH SMALL-SIGNAL BJT

MICROCHIP

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：RH SMALL-SIGNAL BJT

MICROCHIP

微芯科技