MSR2N2369AUBC数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

特性 Features

The device packages for the encapsulated (THROUGH-HOLE AND SURFACE MOUNT) device types are as follows: (2N2369A and 2N3227) (TO-18), (2N4449) (TO-46), (2N2369A 2N3227, 2N4449) (UB, UBC, and UBCN), (UA version), (U version dual devices).
The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/317.

简介

MSR2N2369AUBC属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MSR2N2369AUBC晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。