MSR2N2369AUBC分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

DESCRIPTION

This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to

drive many high-reliability applications. This device is constructed and screened to a JANSR

performance level with radiation test method 1019 wafer lot acceptance conducted on all die

lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness

assurance requirements for space flight projects

FEATURES

 JEDEC registered 2N2369

 TID level screened per MIL-PRF-19500

 Also available with ELDRS testing to 0.01 Rad(s)/ sec

 MKCR / MHCR chip die available

 RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate

APPLICATIONS / BENEFITS

 Rad-Hard power supplies

 Rad-Hard motor controls

 General purpose switching

 Instrumentation Amps

 EPS Satellite switching power applications