| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MSN0260D | 20V(D-S) N-Channel Enhancement Mode Power MOS FET 文件：630.41 Kbytes 页数：6 Pages | MORESEMI 摩矽半导体 | MORESEMI | |
MSN0260D | Low Voltage MOS FETs | MORESEMI 摩矽半导体 | MORESEMI | |
NCE N-Channel Enhancement Mode Power MOSFET 文件：363.55 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：362.22 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =60A RDS(ON) 文件：318.37 Kbytes 页数：7 Pages | NCEPOWER 新洁能 | NCEPOWER |
技术参数
- ID(A)：
60
- VDS(V)：
20
- VGS(V)：
±12
- Vt(V)：
0.8
- RDS(on) Max(Typ)( mΩ)_Vg=4.5V：
5.5
- RDS(on) Max(Typ)( mΩ)_Vg=2.5V：
8
- Package：
TO-252
更多MSN0260D供应商
更新时间2026-1-19 10:00:00
相关规格书
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
