12-200V N-Channel Trench MOSFET

\n The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• V DS =200V,I D =60A\nR DS(ON) <32m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD capabilit;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：362.22 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =60A RDS(ON)

文件：318.37 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 650 V (D-S) MOSFET

文件：1.08688 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件：339.7 Kbytes 页数：5 Pages

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

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