NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCEPower

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丝印：NCE0260T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =60A RDS(ON)

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NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• V DS =200V,I D =60A\nR DS(ON) <32m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD capabilit;

NCEPower

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12-200V N-Channel Trench MOSFET

NCEPower

新洁能