1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400D/DL is a 1,048,576-word · 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件：499.63 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：284.82 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

原厂提供

文件：1.145132 Mbytes 页数：13 Pages

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明纬电子

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