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MSM514400E

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-60SJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-60TS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-70SJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-70TS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-60SJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-60TS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-70SJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-70TS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-XXSJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400EL-XXTS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-XXSJ

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM514400E-XXTS-K

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION TheMSM514400E/ELisa1,048,576-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514400E/ELachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

HM514400A

1,048,576-WORDx4-BITDYNAMICRAM

1,048,576-WORDx4-BITDYNAMICRAM

HitachiHitachi, Ltd.

日立公司

HM514400B

1,048,576-wordX4-bitDynamicRandomAccessMemory

TheHitachiHM514400B/BL,HM514400C/CLareCMOSdynamicRAMorganized1,048,576-word×4-bit.HM514400B/BL,HM514400C/CLhaverealizedhigherdensity,higherperformanceandvariousfunctionsbyemploying0.8µmCMOSprocesstechnologyandsomenewCMOScircuitdesigntechnologies.TheHM514400B/B

HitachiHitachi, Ltd.

日立公司

HM514400BL

1,048,576-wordX4-bitDynamicRandomAccessMemory

TheHitachiHM514400B/BL,HM514400C/CLareCMOSdynamicRAMorganized1,048,576-word×4-bit.HM514400B/BL,HM514400C/CLhaverealizedhigherdensity,higherperformanceandvariousfunctionsbyemploying0.8µmCMOSprocesstechnologyandsomenewCMOScircuitdesigntechnologies.TheHM514400B/B

HitachiHitachi, Ltd.

日立公司

HM514400C

1,048,576-wordX4-bitDynamicRandomAccessMemory

TheHitachiHM514400B/BL,HM514400C/CLareCMOSdynamicRAMorganized1,048,576-word×4-bit.HM514400B/BL,HM514400C/CLhaverealizedhigherdensity,higherperformanceandvariousfunctionsbyemploying0.8µmCMOSprocesstechnologyandsomenewCMOScircuitdesigntechnologies.TheHM514400B/B

HitachiHitachi, Ltd.

日立公司

HM514400CL

1,048,576-wordX4-bitDynamicRandomAccessMemory

TheHitachiHM514400B/BL,HM514400C/CLareCMOSdynamicRAMorganized1,048,576-word×4-bit.HM514400B/BL,HM514400C/CLhaverealizedhigherdensity,higherperformanceandvariousfunctionsbyemploying0.8µmCMOSprocesstechnologyandsomenewCMOScircuitdesigntechnologies.TheHM514400B/B

HitachiHitachi, Ltd.

日立公司

详细参数

  • 型号:

    MSM514400E

  • 制造商:

    OKI

  • 制造商全称:

    OKI electronic componets

  • 功能描述:

    1,048,576-Word x 4-Bit DYNAMIC RAM

  • FAST PAGE MODE TYPE

供应商型号品牌批号封装库存备注价格
OKI
1305+
原装假一赔十
12000
公司特价原装现货
询价
OKI
05/06+
SOJ20
441
全新原装100真实现货供应
询价
OKI
120
询价
OKI
2017+
24896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
OKI
2020+
N/A
519
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
OKI
99+
SOJ20
2900
全新原装进口自己库存优势
询价
OKI
16+
NA
8800
原装现货,货真价优
询价
OKI
16+
DIP
7860
原装现货假一罚十
询价
OKI
2020+
原厂封装
35000
100%进口原装正品公司现货库存
询价
OKI
17+
SOJ20
9988
只做原装进口,自己库存
询价
更多MSM514400E供应商 更新时间2024-5-24 13:01:00