1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：174.85 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：174.85 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：174.85 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：174.85 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

文件：174.85 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

OKI

冲电线

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION\nThe MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer meta • 1,048,576-word × 4-bit configuration\n• Single 5V power supply, ± 10% tolerance\n• Input : TTL compatible, low input capacitance\n• Output : TTL compatible, 3-state\n• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)\n• Fast page mode, read modify write capability\n• CAS before RAS ;

OKI

冲电线