262,144-Word x 4-Bit Multiport DRAM

DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and asynchronously. FEATURES • Single power supply: 5 V ±10 • Full TTL compatibility • Multiport organization RAM:

文件：507.88 Kbytes 页数：45 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 4-Bit Multiport DRAM

DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and asynchronously. FEATURES • Single power supply: 5 V ±10 • Full TTL compatibility • Multiport organization RAM:

文件：507.88 Kbytes 页数：45 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 4-Bit Multiport DRAM

DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and asynchronously. FEATURES • Single power supply: 5 V ±10 • Full TTL compatibility • Multiport organization RAM:

文件：507.88 Kbytes 页数：45 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE

262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE

文件：1.20949 Mbytes 页数：16 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE

262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE

文件：1.20949 Mbytes 页数：16 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265C/CSL is a 262,144-word ´ 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514265C/CSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-laye

文件：266.99 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265C/CSL is a 262,144-word ´ 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514265C/CSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-laye

文件：266.99 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-powerconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：146.82 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-powerconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：206.36 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

262,144-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM514265E/ESL is a 262,144-word ×16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-powerconsumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer met

文件：206.36 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社