2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5116805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116805C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件：681.08 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5116805C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116805C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件：681.08 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

16 Meg x 1-Bit DYNAMIC RAM

16 Meg x 1-Bit DYNAMIC RAM

文件：1.41854 Mbytes 页数：20 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

文件：568.08 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件：96.85 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件：478.54 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word 횞 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400D is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：160.7 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word 횞 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：214.19 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5117405B is a 4,194,304-wordx 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CM

文件：96.65 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5117405D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117405D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：193.45 Kbytes 页数：15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社