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MSM5118165F

1,048,576-Word 횞 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION The MSM5118165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer meta

文件:178.57 Kbytes 页数:15 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514100D

4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件:262.38 Kbytes 页数:17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514100DL

4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer met

文件:262.38 Kbytes 页数:17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-60SJ

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-60TS-K

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-60ZS

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-70SJ

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-70TS-K

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM514102D-70ZS

4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

DESCRIPTION The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer me

文件:311.59 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

技术参数

  • Package:

    DFN5*6

  • IF(A):

    4.8

  • VZ(V):

    650

  • VF(V):

    1.4

  • Tj:

    -55-175

供应商型号品牌批号封装库存备注价格
QUALCOMM
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
MICROSEMI
25+23+
DO214AB
37561
绝对原装正品全新进口深圳现货
询价
Microsemi Corporation
23+
NA
800
原装现货 库存特价/长期供应元器件代理经销
询价
OKI
05+
DIP16
367
全新原装现货
询价
QUALCOMM/高通
2403+
BGA
6489
原装现货热卖!十年芯路!坚持!
询价
SUNMATE(森美特)
2019+ROHS
SOT-563
66688
森美特高品质产品原装正品免费送样
询价
QUALCOMM/高通
21+
BGA
10000
只做原装,质量保证
询价
NHIP
最新
0450+
20
询价
OKI
24+/25+
8
原装正品现货库存价优
询价
BOURNS/伯恩斯
24+
SMD
60000
询价
更多MSM供应商 更新时间2026-1-19 14:14:00