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MSM5116400A

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

文件:568.46 Kbytes 页数:8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400B

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件:70.43 Kbytes 页数:8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400C

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件:478.7 Kbytes 页数:17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-50

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-50SJ

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-50TS-K

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-60

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-60SJ

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MSM5116400D-60TS-K

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件:160.28 Kbytes 页数:14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

技术参数

  • Package:

    DFN5*6

  • IF(A):

    4.8

  • VZ(V):

    650

  • VF(V):

    1.4

  • Tj:

    -55-175

供应商型号品牌批号封装库存备注价格
SYNCMOS
25+
烧录器
8880
原装认准芯泽盛世!
询价
QUALCOMM
24+
原厂封装
4000
原装现货假一罚十
询价
sea-lan
2015+
1812
4000
百分百原装正品现货/含16%增值税
询价
SEA&LAND
24+
con
10000
查现货到京北通宇商城
询价
QUALCOMM
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
PROTEK/普罗太克
23+
SOT563
89630
当天发货全新原装现货
询价
Microsemi Corporation
23+
NA
800
原装现货 库存特价/长期供应元器件代理经销
询价
ROHM(罗姆)
2021+
TSOP-26
499
询价
Banner Engineering
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
TE/泰科
24+
SMD
880000
明嘉莱只做原装正品现货
询价
更多MSM供应商 更新时间2026-1-17 10:01:00