SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 22mΩ@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：605.38 Kbytes 页数：4 Pages

ISC

无锡固电

1200V, 17 mOhm, Discrete mSiC™ MOSFET

MSC017SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equip Low capacitances and low gate charge\nFast switching speed due to low internal gage resistance (ESR)\nStable operation at high junction temperature at 175 °C\nFast and reliable body diode\nSuperior avalanche ruggedness\nRoHS Compliant;

Microchip

微芯科技

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：307.49 Kbytes 页数：2 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：575.15 Kbytes 页数：3 Pages

ISC

无锡固电

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET SIC 1200V 17 MOHM TO-247

Microchip

微芯科技

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET SIC 1200V 17 MOHM SOT-227

Microchip

微芯科技

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：MOSFET SIC 1200V 17 MOHM TO-268

Microchip

微芯科技