MSC017SMA120中文资料1200V, 17 mOhm, Discrete mSiC™ MOSFET数据手册Microchip规格书

描述 Description

MSC017SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

特性 Features

Low capacitances and low gate charge
Fast switching speed due to low internal gage resistance (ESR)
Stable operation at high junction temperature at 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS Compliant

简介

MSC017SMA120属于分立半导体产品的晶体管-FETMOSFET-阵列。由制造生产的MSC017SMA120晶体管 - FET，MOSFET - 阵列场效应晶体管 (FET) 是使用电场控制电流流动的电子器件。向栅极端子施加电压会改变漏极端子和源极端子之间的电导率。FET 也称为单极型晶体管，因为其涉及单载流子类型的操作。也就是说，FET 在操作中使用电子或空穴作为载流子，而不是同时使用两者。场效应晶体管通常在低频下显示出极高的输入阻抗。