MSC0606W中文资料下载市场行情摩矽半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MSC0606W	文件：701.97 Kbytes Page：8 Pages	N and P-Channel Enhancement Mode Power MOS FET 文件：701.97 Kbytes 页数：8 Pages	MORESEMI 摩矽半导体	MORESEMI
MSC0606W	文件：300 bytes Page：1 Pages	N and P-Channel Enhancement Mode Power MOS FET	MORESEMI 摩矽半导体	MORESEMI
TN0606	文件：31.44 Kbytes Page：4 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs 文件：31.44 Kbytes 页数：4 Pages	SUTEX	SUTEX
TP0606	文件：454.5 Kbytes Page：4 Pages	P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i 文件：454.5 Kbytes 页数：4 Pages	SUTEX	SUTEX
VN0606L	文件：434.02 Kbytes Page：2 Pages	N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and 文件：434.02 Kbytes 页数：2 Pages	SUTEX	SUTEX

更多MSC0606W供应商更新时间2026-10-31 11:10:00