N and P-Channel Enhancement Mode Power MOS FET

文件：701.97 Kbytes 页数：8 Pages

MORESEMI

摩矽半导体

N and P-Channel Enhancement Mode Power MOS FET

MORESEMI

摩矽半导体

N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 12.9 mΩ max. ( VGS = 10 V, ID = 30 A ) • Low Ciss : Ciss = 2170 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±60 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：806.76 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon Photo Transistor

Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um

文件：119.81 Kbytes 页数：1 Pages

KODENSHI

可天士

Silicon PIN Photo Diode

High Speed Sensitivity Common cathode type PIN Photo Diode Structure 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Anode(Top) : 150um - Cathode(Bottom) : 680um X 680um 1

文件：133.53 Kbytes 页数：1 Pages

KODENSHI

可天士