1200V, 80 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件：1.03139 Mbytes 页数：13 Pages

MICROCHIP

微芯科技

1200V, 80 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件：1.00256 Mbytes 页数：12 Pages

MICROCHIP

微芯科技

1200V, 80 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件：1.00256 Mbytes 页数：12 Pages

MICROCHIP

微芯科技

1200V, 80 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件：1.03139 Mbytes 页数：13 Pages

MICROCHIP

微芯科技