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MSAER12N50A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件:48.44 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAER30N20A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件:48.35 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAER38N10A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件:48.78 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAEX8P50A

P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED

Features ● High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A ● Ultrafast body diode ● Rugged polysilicon gate cell structure ● Increased Unclamped Inductive Switching (UIS) capability ● Hermetically sealed, surface mount power packag

文件:49.32 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAEZ33N20A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件:48.54 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAEZ50N10A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

文件:48.38 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAER57N10A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SCHOTTKY

文件:245.27 Kbytes 页数:2 Pages

Microsemi

美高森美

MSAEH70A03A

MOSFET / Schottky

Microchip

微芯科技

MSAER07N80A

N-Channel MOSFET

Microchip

微芯科技

MSAER12N50A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microchip

微芯科技

详细参数

  • 型号:

    MSAE

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    TRANS MOSFET N-CH 200V 30A 3PIN COOLPACK1 - Bulk

供应商型号品牌批号封装库存备注价格
MASON
24+
ROHS
990000
明嘉莱只做原装正品现货
询价
-
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MSEMHR
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
Adam Tech
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
ITT
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
Panasonic
2010+
N/A
66
加我qq或微信,了解更多详细信息,体验一站式购物
询价
PANASONIC
25+
传感器
396
就找我吧!--邀您体验愉快问购元件!
询价
PANASONIC
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Panasonic
5
全新原装 货期两周
询价
Panasonic
2022+
1
全新原装 货期两周
询价
更多MSAE供应商 更新时间2025-12-25 19:10:00