N-CHANNEL ENHANCEMENT MODE POWER MOSFET

500 Volts 24 Amps 230 mΩ Features · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance ·

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MICROSEMI

美高森美

N-Channel MOSFET

FeaturesHermetically SealedLow Package InductanceLow Thermal ResistanceRuggedized Design

Microchip

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文件：86.15 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

24 AMP / 500 Volts 0.23 OHM N-Channel POWER MOSFET

文件：216.79 Kbytes 页数：2 Pages

SSDI

24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET

文件：54.66 Kbytes 页数：3 Pages

SSDI