LOW VOLTAGE DROP SCHOTTKY DIODE

Features • Tungsten/Platinum schottky barrier for very low VF • Oxide passivated structure for very low leakage currents • Guard ring protection for increased reverse energy capability • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface moun

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文件：95.5 Kbytes 页数：3 Pages

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文件：150.89 Kbytes 页数：6 Pages

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