N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

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Microsemi

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microchip

微芯科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

1206

Taiyo Yuden/太诱

上传：深圳市锐隆电子有限公司

TO-247

Microchip

微芯科技

上传：深圳深宇韬电子科技有限公司