N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

600 Volts 75 Amps 1.8 Volts vce(sat) Features · Rugged polysilicon gate cell structure · high current handling capability, latch-proof · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance · Reverse polarity available upon request: MSAGX75

文件：48.25 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Legacy Power Discretes & Modules

Microchip

微芯科技

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Features • Rugged polysilicon gate cell structure • high current handling capability, latch-proof • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request: MSAHX75L60D • low VCE(sat) IGBT, low conduct

文件：49.88 Kbytes 页数：2 Pages

MICROSEMI

美高森美

CERMOD-TM HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT?셎

DESCRIPTION C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance ceramic to metal sealed light weight package. This series of CERMOD™ power modules are offered in a three phase b

文件：194.21 Kbytes 页数：10 Pages

IRF

CERMOD-TM HERMETIC HIGH POWER MODULES, THREE PHASE BRIDGE, IGBT?셎

DESCRIPTION C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance ceramic to metal sealed light weight package. This series of CERMOD™ power modules are offered in a three phase b

文件：194.21 Kbytes 页数：10 Pages

IRF