N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

文件：48.41 Kbytes 页数：2 Pages

Microsemi

美高森美

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microchip

微芯科技

40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET

文件：202.41 Kbytes 页数：2 Pages

SSDI

Avalanche Rated N-channel MOSFET

文件：123.01 Kbytes 页数：2 Pages

SSDI

40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET

文件：48.83 Kbytes 页数：3 Pages

SSDI