N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

600 Volts 75 Amps 2.7 Volts vce(sat) Features · Rugged polysilicon gate cell structure · high current handling capability, latch-proof · Hermetically sealed, surface mount power package · Low package inductance · Very low thermal resistance · Reverse polarity available upon request: MSAGX

文件：45.53 Kbytes 页数：2 Pages

Microsemi

美高森美

Legacy Power Discretes & Modules

Microchip

微芯科技

FAST RECOVER DIODE

APPLICATIONS  Snubber diode  Switch power supply  Antiparalle Diode for high frequenc y switching devices FEATURES Ultrafast Recovery Time Low Recovery Loss Low Forward Voltage Low Leakage Current

文件：502.46 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

FAST RECOVER DIODE

APPLICATIONS  Snubber diode  Switch power supply  Antiparalle Diode for high frequenc y switching devices FEATURES Ultrafast Recovery Time Low Recovery Loss Low Forward Voltage Low Leakage Current

文件：502.46 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

High Breakdown Voltage

文件：437.6 Kbytes 页数：3 Pages

SEMIHOW