N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES ➤ Ultrafast body diode ➤ Rugged polysilicon gate cell structure ➤ Increased Unclamped Inductive Switching (UIS) capability ➤ Hermetically sealed, surface mount power package ➤ Low package inductance ➤ Very low thermal resistance ➤ Reverse polarity available upon request

文件：48.41 Kbytes 页数：2 Pages

Microsemi

美高森美

N-Channel Enhancement Mode Power Mosfet

文件：167.03 Kbytes 页数：3 Pages

Microsemi

美高森美

N-Channel Enhancement Mode Power Mosfet

文件：167.03 Kbytes 页数：3 Pages

Microsemi

美高森美

N-Channel MOSFET

·Hermetically Sealed\n·Low Package Inductance\n·Low Thermal Resistance\n·Ruggedized Design;

Microchip

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