N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

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MICROSEMI

美高森美

iscN-Channel MOSFET Transistor

文件：319.73 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Computing

文件：173.49 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Comput

文件：168.98 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司