MRFE6VP61K25GS中文资料Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V数据手册恩XP规格书

描述 Description

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

特性 Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single-Ended or in a Push-Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
NOTE: PARTS ARE PUSH–PULL