MRFE6S9130H中文资料880 MHz, 27 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRFE6S9130HR3 and MRFE6S9130HSR3 are designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
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特性 Features

•Typical Single–Carrier N–CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950mA, Pout = 27 Watts Avg., f = 880 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain: 19.2 dB
\tDrain Efficiency: 30.5%
\tACPR @ 750 kHz Offset: –47.6 dBc in 30 kHz Bandwidth

•Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.