MRFE6S9125N中文资料800 MHz，27 W平均值，28 V，单载波N-CDMA，GSM EDGE横向N信道射频功率MOSFET数据手册恩XP规格书

描述 Description

The MRFE6S9125NR1 and MRFE6S9125NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

特性 Features

N-CDMA Application
• Typical Single-Carrier N-CDMA Performance @ 800 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain: 20.2 dBDrain Efficiency: 31%ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)Power Gain: 20 dBDrain Efficiency: 40%Spectral Regrowth @ 400 kHz Offset = –63 dBcSpectral Regrowth @ 600 kHz Offset = –78 dBcEVM: 1.8% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 125 Watts, Full Frequency Band (920-960 MHz)Power Gain: 19 dBDrain Efficiency: 62%
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.