MRFE6VP61K25GN中文资料Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V数据手册恩XP规格书

描述 Description

These high ruggedness devices, MRFE6VP61K25N and MRFE6VP61K25GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

特性 Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single-Ended or in a Push-Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
• Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
Typical Applications
• Broadcast
• FM broadcast

• HF and VHF broadcast
• Industrial, Scientific, Medical (ISM)
• CO2 laser generation

• Plasma etching

• Particle accelerators (synchrotrons)

• MRI

• Industrial heating/welding
• Aerospace
• VHF omnidirectional range (VOR)

• Weather radar
• Mobile Radio
• HF and VHF communications

• PMR base stations