MRFE6S9201H中文资料880 MHz, 40 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRFE6S9201HR3 and MRFE6S9201HSR3 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Archived content is no longer updated and is made available for historical reference only.

特性 Features

•Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 20.8 dB
\tDrain Efficiency: 31.3%
\tDevice Output Signal PAR: 8.1 dB @ 0.01% Probability on CCDF
\tACPR @ 750 kHz Offset: –46.5 dBc in 30 kHz Channel Bandwidth

•Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

•100% PAR Tested for Guaranteed Output Power Capability

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•Internally Matched for Ease of Use

•Greater Negative Gate-Source Voltage Range for Improved Class C Operation

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.