MRFE6VP5600HS中文资料Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V数据手册恩XP规格书

描述 Description

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

特性 Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single-Ended or in a Push-Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
• These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
NOTE: PARTS ARE PUSH–PULL