RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

文件：616.44 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

文件：616.44 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Sin

文件：616.44 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1805-1880 MHz，72 W平均值，30 V单载波W-CDMA射频功率LDMOS

The MRF8P18265HR6 and MRF8P18265HSR6 are designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)1805 MHz15.944.86.9–3;

恩XP

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W Avg., 30 V

The MRF8P18265HR6 and MRF8P18265HSR6 are designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)1805 MHz15.944.86.9–3;

恩XP