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MRF6VP11KGS中文资料Lateral N-Channel Broadband RF Power MOSFET, 1.8-150 MHz, 1000 W, 50 V数据手册恩XP规格书
MRF6VP11KGS规格书详情
描述 Description
The MRF6VP11KHR6 and MRF6VP11KGSR5 are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
特性 Features
• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 26 dBDrain Efficiency: 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
NOTE: PARTS ARE PUSH–PULL
技术参数
- 型号：
MRF6VP11KGS
- 功能描述：
射频双极电源晶体管 VHV6 130MHZ 1000W NI1230
- RoHS：
否
- 制造商：
M/A-COM Technology Solutions
- 配置：
Single 直流集电极/Base Gain hfe
- Min：
40
- 最大工作频率：
30 MHz 集电极—发射极最大电压
- VCEO：
25 V 发射极 - 基极电压
- VEBO：
4 V
- 集电极连续电流：
20 A
- 功率耗散：
250 W
- 封装/箱体：
Case 211-11
- 封装：
Tray
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
22+ |
NI1230S4 GullWing |
9000 |
原厂渠道,现货配单 |
询价 | ||
FREESCA |
18+ |
TO-62 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Freescale |
1930+ |
N/A |
89 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Freescal |
17+ |
射频管 |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FREESCALE |
23+24 |
NI-123 |
53870 |
原装正品,原盘原标,提供BOM一站式配单 |
询价 | ||
FREESCALE |
2402+ |
high-frequency |
8324 |
原装正品!实单价优! |
询价 | ||
Freescale |
22+ |
NA |
89 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
恩XP |
75 |
询价 |
