MRF5S9150H中文资料880 MHz, 33 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S9150HR3 and MRF5S9150HSR3 are designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
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特性 Features

•Typical Single–Carrier N–CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1500 mA, Pout = 33 Watts Avg., IS–95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 19.7 dB
\tDrain Efficiency: 28.4%
\tACPR @ 750 kHz Offset: –46.8 dBc in 30 kHz Bandwidth

•Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Lower Thermal Resistance Package

•Low Gold Plating Thickness on Leads, 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.