MRF5S9100N中文资料880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF5S9100NR1 and MRF5S9100NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
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特性 Features

•Typical Single–Carrier N–CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 950mA, Pout = 20 Watts Avg., IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 19.5 dB
\tDrain Efficiency: 28%
\tACPR @ 750 kHz Offset: –46.8 dBc in 30 kHz Bandwidth

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power

•Characterized with Series Equivalent Large–Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•200°C Capable Plastic Package

•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.